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Professional Background - Ph.D. (Materials Science & Engineering) 2001,
Stevens Institute of Technology, Hoboken, NJ
- Materials Scientist, 1989-1997, Nanjing Electronic
Devices Institute, Nanjing, China
- M. S. (Semiconductor Physics & Devices) 1989,
Nanjing University, Nanjing, China
Awards - Science & Technology Advancement Award, Jiangsu
Province
- Science & Technology Advancement Award, Nanjing
Electronic Devices Institute
Research Experience - Chemical gas sensor design and development for
environmental and industry monitoring
- Reactive magnetron sputtering system development,
characterization and problem solving
- High-frequency pulsed plasma diagnostics and study
- Process design and optimization for deposition
of thin films with targeted specifications
- Characterization of structural, compositional,
optical and electrical properties of nanoparticles, thin films and bulk materials
Selected Achievements - Development of a novel sensing material with fast
time response for building up hydrogen safety sensors
- Development of Dual Anode Magnetron Reactive Sputtering
system as a technical approach to disappearing anode problem
- Pioneer study of fundamental time-resolved behavior
of high frequency pulsed plasma in metallic and oxide modes
- Development of an AC substrate biasing method
for deposition of dense dielectric thin films at ambient temperature
- Innovation of the hardware and software of an
Mercury C-V Carrier Concentration Depth Profilometer for increased sample handling
capacity by 100%
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